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CMOS STATIC RAM 16K (16K x 1-BIT)
Integrated Device Technology, Inc.
IDT6167SA IDT6167LA
FEATURES:
* High-speed (equal access and cycle time) -- Military: 15/20/25/35/45/55/70/85/100ns (max.) -- Commercial: 15/20/25/35ns (max.) * Low power consumption * Battery backup operation -- 2V data retention voltage (IDT6167LA only) * Available in 20-pin CERDIP and Plastic DIP, and 20-pin SOJ * Produced with advanced CMOS high-performance technology * CMOS process virtually eliminates alpha particle softerror rates * Separate data input and output * Military product compliant to MIL-STD-883, Class B
DESCRIPTION:
The lDT6167 is a 16,384-bit high-speed static RAM organized as 16K x 1. The part is fabricated using IDT's highperformance, high reliability CMOS technology.
Access times as fast as 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circuit will automatically go to, and remain in, a standby mode as long as CS remains HIGH. This capability provides significant system-level power and cooling savings. The lowpower (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1W operating off a 2V battery. All inputs and the output of the IDT6167 are TTL-compatible and operate from a single 5V supply, thus simplifying system designs. The IDT6167 is packaged in a space-saving 20-pin, 300 mil Plastic DIP or CERDIP, Plastic 20-pin SOJ, providing high board-level packing densities. Military grade product is manufactured in compliance with the latest revision of MIL-STD-883, Class B, making it ideally suited to military temperature applications demanding the highest level of performance and reliability.
FUNCTIONAL BLOCK DIAGRAM
A0
VCC GND ADDRESS DECODE 16,384-BIT MEMORY ARRAY
A13
DIN
I/O CONTROL
DOUT
CS WE
CONTROL LOGIC
2981 drw 01
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
(c)1996 Integrated Device Technology, Inc. For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.
MARCH 1996
2981/5
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IDT6167SA/LA CMOS STATIC RAM 16K (16K x 1-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATIONS
A0 A1 A2 A3 A4 A5 A6 DOUT 1 2 3 4 5 6 7 8 9 10 P20-1, D20-1, & S020-1 20 19 18 17 16 15 14 13 12 11 VCC A13 A12 A11 A10 A9 A8 A7 DIN
ABSOLUTE MAXIMUM RATINGS(1)
Symbol VTERM Rating Terminal Voltage with Respect to GND Operating Temperature Temperature Under Bias Storage Temperature Power Dissipation DC Output Current Com'l. -0.5 to +7.0 Mil. -0.5 to +7.0 Unit V
TA TBIAS TSTG PT IOUT
0 to +70 -55 to +125 -55 to +125 1.0 50
-55 to +125 -65 to +135 -65 to +150 1.0 50
C C C W mA
WE
GND
CS
2981 drw 02
DIP/SOJ TOP VIEW
PIN DESCRIPTIONS
A0-A13 Address Inputs Chip Select Write Enable Power DATAIN DATAOUT Ground
2981 tbl 01
NOTE: 2981 tbl 03 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
CS WE
VCC DIN DOUT GND
CAPACITANCE (TA = +25C, f = 1.0MHz)
Symbol CIN COUT Parameter(1) Input Capacitance Output Capacitance Conditions VIN = 0V VOUT = 0V Max. Unit 7 7 pF pF
TRUTH TABLE (1)
Mode Standby Read Write
CS
H L L
WE
X H L
NOTE: 2981 tbl 04 1. This parameter is determined by device characterization, but is not production tested.
Output High-Z DATAOUT High-Z
Power Standby Active Active
2981 tbl 02
NOTE: 1. H = VIH, L = VIL, X = Don't Care.
RECOMMENDED DC OPERATING CONDITIONS
Symbol VCC GND Parameter Supply Voltage Supply Voltage Input High Voltage Input Low Voltage Min. 4.5 0 2.2 -0.5
(1)
Typ. 5.0 0 -- --
Max. Unit 5.5 0 6.0 0.8 V V V V
RECOMMENDED OPERATING TEMPERATURE AND SUPPLY VOLTAGE
Grade Military Commercial Temperature -55C to +125C 0C to +70C GND 0V 0V VCC 5V 10% 5V 10%
2981 tbl 06
VIH VIL
NOTE: 2981 tbl 05 1. VIL (min.) = -3.0V for pulse width less than 20ns, once per cycle.
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IDT6167SA/LA CMOS STATIC RAM 16K (16K x 1-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS(1)
(VCC = 5.0V 10%, VLC = 0.2V, VHC = VCC - 0.2V)
6167SA/LA15 Symbol ICC1 Parameter Operating Power Supply Current CS VIL, Outputs Open, VCC = Max., f = 0(3) Dynamic Operating Current CS VIL, Outputs Open, VCC = Max., f = fMAX(3) Standby Power Supply Current (TTL Level) CS VIH, Outputs Open, VCC = Max., f = fMAX(3) Full Standby Power Supply Current (CMOS Level) CS VHC, VCC = Max. VIN VHC or VIN VLC, f = 0(3) Power Com'l. SA LA SA LA SA LA SA LA 90 55 120 100 50 35 5 0.9 Mil. 90 60 130 110 50 35 10 2 6167SA/LA20 Com'l. 90 55 100 80 35 30 5 0.05 Mil. 90 60 110 85 35 30 10 2 6167SA/LA25 Com'l. 90 55 100 70 35 25 5 0.05 Mil. 90 60 100 75 35 25 10 0.9 mA mA mA Unit mA
ICC2
ISB
ISB1
DC ELECTRICAL CHARACTERISTICS(1) (CONTINUED)
(VCC = 5.0V 10%, VLC = 0.2V, VHC = VCC - 0.2V)
6167SA/LA35 6167SA/LA45(2) 6167SA/LA55(2) 6167SA/LA70(2) Symbol ICC1 Parameter Operating Power Supply Current CS VIL, Outputs Open, VCC = Max., f = 0(3) Dynamic Operating Current CS VIL, Outputs Open, VCC = Max., f = fMAX(3) Standby Power Supply Current (TTL Level) CS VIH, Outputs Open, VCC = Max., f = fMAX(3) Full Standby Power Supply Current (CMOS Level) CS VHC, VCC = Max. VIN VHC or VIN VLC, f = 0(3) Power Com'l. SA LA SA LA SA LA SA LA 90 55 100 65 35 20 5 0.05 Mil. 90 60 100 70 35 20 10 0.9 Com'l. -- -- -- -- -- -- -- -- Mil. 90 60 100 65 35 20 10 0.9 Com'l. -- -- -- -- -- -- -- -- Mil. 90 60 100 60 35 20 10 0.9 Com'l. -- -- -- -- -- -- -- -- Mil. 90 60 100 60 35 15 10 0.9
2981 tbl 07
Unit mA
ICC2
mA
ISB
mA
ISB1
mA
NOTES: 1. All values are maximum guaranteed values. 2. -55C to +125C temperature range only. Also available; 85ns and 100ns Military devices. 3. fMAX = 1/tRC, only address inputs cycling at fMAX. f = 0 means no Address inputs change.
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IDT6167SA/LA CMOS STATIC RAM 16K (16K x 1-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS
VCC = 5.0V 10%
IDT6167SA Symbol |ILI| Parameter Input Leakage Current Test Condition VCC = Max., VIN = GND to VCC |ILO| Output Leakage Current VCC = Max., CS = VIH, VOUT = GND to VCC VOL VOH Output Low Voltage Output High Voltage IOL = 8mA, VCC = Min. IOH = -4mA, VCC = Min. MIL COM'L MIL COM'L Min. -- -- -- -- -- 2.4 Max. 10 5 10 5 0.4 -- IDT6167LA Min. -- -- -- -- -- 2.4 Max. 5 2 5 2 0.4 -- V V
2981 tbl 08
Unit A A
DATA RETENTION CHARACTERISTICS OVER ALL TEMPERATURE RANGES
(LA Version Only) VLC = 0.2V, VHC = VCC - 0.2V
Typ. (1) VCC @ Symbol VDR ICCDR tCDR tR(3) |ILI|
(3)
Max. VCC @ 2.0V -- 200 20 -- -- 2 3.0V -- 300 30 -- -- 2 ns ns A
2981 tbl 09
Parameter VCC for Data Retention Data Retention Current Chip Deselect to Data Retention Time Operation Recovery Time Input Leakage Current
Test Condition -- MIL. COM'L.
Min. 2.0 -- -- 0 tRC(2)
2.0v -- 0.5 0.5 -- -- --
3.0V -- 1.0 1.0 -- -- --
Unit V A
CS VHC
VIN VHC or VLC --
--
NOTES: 1. TA = +25C. 2. tRC = Read Cycle Time. 3. This parameter is guaranteed by device characterization, but is not production tested.
LOW VCC DATA RETENTION WAVEFORM
DATA RETENTION MODE VCC 4.5V VDR 2V 4.5V
tCDR
tR VDR
CS
VIH
VIH
2981 drw 03
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IDT6167SA/LA CMOS STATIC RAM 16K (16K x 1-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
AC TEST CONDITIONS
Input Pulse Levels Input Rise/Fall Times Input Timing Reference Levels Output Reference Levels AC Test Load
5V
GND to 3.0V 5ns 1.5V 1.5V See Figures 1 and 2
2981 tbl 10
5V
480 DATAOUT 255 30pF*
DATAOUT 255
480
5pF*
2981 drw 04
2981 drw 05
Figure 1. AC Test Load *Includes scope and jig.
Figure 2. AC Test Load (for tCLZ, tCHZ, tWHZ and tOW)
AC ELECTRICAL CHARACTERISTICS (VCC = 5.0V 10%, All Temperature Ranges)
6167SA15 6167LA15 Symbol Read Cycle tRC tAA tACS tCLZ tOH tPU(2) tPD
(2) (2) (2)
6167SA20/25 6167SA35/45(1) 6167SA55(1)/70(1) 6167LA20/25 6167LA35/45(1) 6167LA55(1)/70(1) Min. Max. 20/25 -- -- 5/5 -- 5/5 0/0 -- 20/20 15/20 15/20 0/0 15/20 0/0 12/15 0/0 -- 0/0 -- 20/25 20/25 -- 10/10 -- -- 20/25 -- -- -- -- -- -- -- -- 8/8 -- Min. 35/45 -- -- 5/5 -- 5/5 0/0 -- 30/45 30/40 30/40 0/0 30/30 0/0 17/20 0/0 -- 0/0 Max. -- 35/45 35/45 -- 15/30 -- -- 35/45 -- -- -- -- -- -- -- -- 15/30 -- Min. 55/70 -- -- 5/5 -- 5/5 0/0 -- 55/70 45/55 45/55 0/0 35/40 0/0 25/30 0/0 -- 0/0 Max. -- 55/70 55/70 -- 40/40 -- -- 55/70 -- -- -- -- -- -- -- -- 40/40 -- Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
2981 tbl 11
Parameter Read Cycle Time Address Access Time Chip Select Access Time Chip Deselect to Output in Low-Z Chip Select to Output in High-Z Output Hold from Address Change Chip Select to Power-Up Time Chip Deselect to Power-Down Time Write Cycle Time Chip Select to End-of-Write Address Valid to End-of-Write Address Set-up Time Write Pulse Width Write Recovery Time Data Valid to End-of-Write Data Hold Time
Min. 15 -- -- 3 -- 3 0 -- 15 15 15 0 13 0 10 0 -- 0
Max. -- 15 15 -- 10 -- -- 15 -- -- -- -- -- -- -- -- 7 --
tCHZ
Write Cycle tWC tCW tAW tAS tWP tWR tDW tDH tWHZ tOW
(2) (2)
Write Enable to Output in High-Z Output Active from End-of-Write
NOTES: 1. -55C to +125C temperature range only. Also available: 85ns and 100ns Military devices. 2. This parameter is guaranteed with AC Load (Figure 2) by device characterization, but is not production tested.
5.2
5
IDT6167SA/LA CMOS STATIC RAM 16K (16K x 1-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
TIMING WAVEFORM OF READ CYCLE NO. 1(1, 2)
tRC
ADDRESS tAA tOH PREVIOUS DATAOUT VALID DATAOUT VALID
2981 drw 06
DATAOUT
TIMING WAVEFORM OF READ CYCLE NO. 2(1, 3)
tRC
CS
tACS tCLZ DATAOUT HIGH IMPEDANCE DATAOUT VALID tPU ICC VCC SUPPLY CURRENT ISB
2981 drw 07
tCHZ
(4)
(4)
HIGH IMPEDANCE
tPD
NOTES: 1. WE is HIGH for Read cycle. 2. Device is continuously selected, CS is LOW. 3. Address valid prior to or coincedent with CS transition LOW. 4. Transition is measured 200mV from steady state.
5.2
6
IDT6167SA/LA CMOS STATIC RAM 16K (16K x 1-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
TIMING WAVEFORM OF WRITE CYCLE NO. 1, (WE CONTROLLED TIMING)(1, 2, 4) WE
tWC ADDRESS
tAW
CS
tAS tWP tWR
(3)
tCHZ
(5)
WE
tWHZ
(5)
tOW
(6)
(5)
DATAOUT
PREVIOUS DATAOUT VALID
DATAOUT VALID (6) tDW tDH
DATAIN
DATAIN VALID
2981 drw 08
TIMING WAVEFORM OF WRITE CYCLE NO. 2, (CS CONTROLLED TIMING)(1, 2, 4) CS
tWC ADDRESS tAW
CS
tAS tCW tWR t (3)
WE
tDW DATAIN DATAIN VALID
2981 drw 09
tDH
NOTES: 1. WE or CS must be inactive during all address transitions. 2. A write occurs during the overlap of a LOW CS and a LOW WE. 3. tWR is measured from the earlier of CS or WE going HIGH to the end of the write cycle. 4. If the CS low transition occurs simultaneously with or after the WE LOW transition, the outputs remain in the high-impedance state. 5. Transition is measured 200mV from steady state. 6. During this period, the I/O pins are in the output state and the input signals must not be applied.
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IDT6167SA/LA CMOS STATIC RAM 16K (16K x 1-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
ORDERING INFORMATION
IDT 6167 Device Type XX Power XXX Speed XX Package X Process/ Temperature Range Blank B Commercial (0C to +70C) Military (-55C to +125C) Compliant to MIL-STD-883, Class B 300MIL Plastic DIP (P20-1) 300MIL CERDIP (D20-1) 300MIL SOJ (SO20-1)
P D Y 15 20 25 35 45 55 70 85 100 SA LA
Military Only Military Only Military Only Military Only Military Only Standard Power Low Power
Speed in nanoseconds
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